GaN is the advantage of larger, have tolerated high temperature of extremely strong structure. Well think pu GaN transistor can decide refers to the highest temperature of 250 ° C, in contrast, Si LDMOS is 225 ° C. In such a high temperature environment, more needs to be able to make full use of the characteristics of packaging technology. As a result, customers will be well think pu 30 years of experience in the field of RF power products beneficiaries of our industrial base for clients with excellent products reliability, cost, and high degree of confidence of the supply chain, can only do these GaN supplier. As we said, GaN into the mainstream.

The first generation of er pu GaN products