GaN: a breakthrough technology

If the independent market research results, the GaN products sales will be more than $300 million in 2014. Only through the mainstream semiconductor company (think pu is leader) production GaN, to achieve the forecast. So, GaN and RF power application exactly? In short, in most applications, GaN Si LDMOS compared to further enhance performance efficiency and power density. This is in the optimal value (FoM) of Johnson is quantified - will be Si is equal to 1 for baseline RF performance variables significantly, causing GaN FoM for 324. Pop, another common RF composites the GaA FoM with 1.44. In a word, GaN really represents a breakthrough technology.

bias

GaN product called high electron mobility transistor (HEMT), the name caught a essence of GaN advantages: high electron drift velocity. The transistor devices for consumption mode, this kind of device for normally open, without applying grid bias. Negative grid bias are needed to close the transistor. This bias is not directly, but in the grace wisdom pu, we provide solutions, not just a component, because has proven of bias circuit is available, and provide constant during the entire product life application support.

The high temperature

GaN is the advantage of larger, have tolerated high temperature of extremely strong structure. Grace of pu GaN transistor can specify the highest temperature of 250 ° C, in contrast, Si LDMOS is 225 ° C. In such a high temperature environment, more needs to be able to make full use of the characteristics of packaging technology. As a result, customers will be well think pu 30 years of experience in the field of RF power products beneficiaries of our industrial base for clients with excellent products reliability, cost, and high degree of confidence of the supply chain, can only do these GaN supplier. As we said, GaN into the mainstream.

The first generation of er pu GaN products

The first generation of grace wisdom pu GaN products will be a unique broadband amplifier, is suitable for the requirements at the highest under various kinds of frequency of 3.5 GHz has high RF performance application. Well first generation of pu GaN technology designed to work under 50 v power supply voltage of the product design, can achieve first-rate efficiency and linearity. This kind of product will use the industry standard package size, enables customers to grace of pu products are used in the existing design without changing the mechanical design. Well a new generation of pu GaN devices will be super efficient, for the greatest RF power devices market segment, cellular base station, in a performance of breakthrough. This technology will, in turn, with switch mode power amplifier (SMPA) break linear amplifier topology concept. Grace wisdom pu to make full use of technology in the entire product range, it will also make the product is suitable for up to a higher frequency of 10 GHz applications.